Selecting a Silicon Drift Detector
نویسندگان
چکیده
منابع مشابه
A Detector for Fast Electron Current Measurements based on Silicon Drift Detector Technology
Solid state detectors for electron current measurements are a well-established tool in electron microscopy, especially for the detection of backscattered electrons (BSE) underneath the pole piece inside a SEM or for the measurement of transmitted electrons in STEM or TEM applications. The progress in electron microscopy over the last years has led to many interesting new applications but also t...
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Inexpensive high-resolution silicon (Si) X-ray detectors are required for on-site surveys of traces of hazardous elements in food and soil by measuring the energies and counts of X-ray fluorescence photons radially emitted from these elements. Gated silicon drift detectors (GSDDs) are much cheaper to fabricate than commercial silicon drift detectors (SDDs). However, previous GSDDs were fabricat...
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The objective of this article is to describe the capability of a two-dimensional (2D) approach to X-ray absorption near-edge structure (XANES) measurement by means of a partial fluorescence yield (PFY) method. 2D-XANES measurements were achieved by using a silicon drift detector as an energy-dispersive fluorescence detector. The advantage of this technique is that it allows full surveys of X-ra...
متن کاملCompton scattering artifacts in electron excited X-ray spectra measured with a silicon drift detector.
Artifacts are the nemesis of trace element analysis in electron-excited energy dispersive X-ray spectrometry. Peaks that result from nonideal behavior in the detector or sample can fool even an experienced microanalyst into believing that they have trace amounts of an element that is not present. Many artifacts, such as the Si escape peak, absorption edges, and coincidence peaks, can be traced ...
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ژورنال
عنوان ژورنال: Microscopy and Microanalysis
سال: 2013
ISSN: 1431-9276,1435-8115
DOI: 10.1017/s1431927613012087